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Transistors with built-in Resistor
UNR921xJ Series (UN921xJ Series)
Silicon NPN epitaxial planar type
Unit: mm
1.60+0.05 -0.03 1.000.05
0.800.05
For digital circuits Features
* Costs can be reduced through downsizing of the equipment and reduction of the number of parts. * SS-Mini type package, allowing automatic insertion through tape packing.
0.12+0.03 -0.01
3
1.600.05
0.85+0.05 -0.03
1 0.270.02
2
(0.50)(0.50)
Marking Symbol (R1) * UNR9210J (UN9210J) 8L 47 k * UNR9211J (UN9211J) 8A 10 k * UNR9212J (UN9212J) 8B 22 k * UNR9213J (UN9213J) 8C 47 k * UNR9214J (UN9214J) 8D 10 k * UNR9215J (UN9215J) 8E 10 k * UNR9216J (UN9216J) 8F 4.7 k * UNR9217J (UN9217J) 8H 22 k * UNR9218J (UN9218J) 8I 0.51 k * UNR9219J (UN9219J) 8K 1 k * UNR921AJ 8X 100 k * UNR921BJ 8Y 100 k * UNR921CJ 8Z * UNR921DJ (UN921DJ) 8M 47 k * UNR921EJ (UN921EJ) 8N 47 k * UNR921FJ (UN921FJ) 8O 4.7 k * UNR921KJ (UN921KJ) 8P 10 k * UNR921LJ (UN921LJ) 8Q 4.7 k * UNR921MJ EL 2.2 k * UNR921NJ EX 4.7 k * UNR921TJ (UN921TJ) EZ 22 k * UNR921VJ FD 2.2 k
(R2) 10 k 22 k 47 k 47 k 5.1 k 10 k 100 k 47 k 10 k 22 k 10 k 4.7 k 4.7 k 47 k 47 k 47 k 2.2 k
5
0.70+0.05 -0.03
Resistance by Part Number
0 to 0.02
(0.80)
5
1: Base 2: Emitter 3: Collector EIAJ: SC-89
SSMini3-F1 Package
Internal Connection
R1 B R2 E C
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating 50 50 100 125 125 -55 to +125 Unit V V mA mW C C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: January 2004 SJH00039BED
0.10 max.
(0.375)
1
UNR921xJ Series
Electrical Characteristics Ta = 25C 3C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cut-off current (Emitter open) Collector-emitter cut-off current (Base open) Emitterbase cut-off UNR9210J/9215J/ 9216J/9217J/921BJ UNR9213J/921AJ Symbol VCBO VCEO ICBO ICEO IEBO
Transistors with built-in Resistor
Conditions IC = 10 A, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0
Min 50 50
Typ
Max
Unit V V A A mA
0.1 0.5 0.01 0.1 0.2 0.5 1.0 1.5 2.0
current UNR9212J/9214J/921DJ/ (Collector 921EJ/921MJ/921NJ/921TJ open) UNR9211J UNR921FJ/921KJ UNR9219J UNR9218J/921CJ/921LJ/921VJ Forward current transfer ratio UNR921VJ UNR9218J/921KJ/921LJ UNR9219J/921DJ/921FJ UNR9211J UNR9212J/921EJ UNR9213J/9214J/921AJ/ 921CJ/921MJ UNR921NJ/921TJ UNR9210J/9215J/9216J/ 9217J/921BJ Collector-emitter saturation voltage Output voltage high-level Output voltage low-level UNR9213J/921BJ/921KJ UNR921DJ UNR921EJ UNR921AJ Transition frequency Input UNR9218J fT R1 VCE(sat) VOH VOL IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 k VCC = 5 V, VB = 2.5 V, RL = 1 k VCC = 5 V, VB = 3.5 V, RL = 1 k VCC = 5 V, VB = 10 V, RL = 1 k VCC = 5 V, VB = 6 V, RL = 1 k VCC = 5 V, VB = 5 V, RL = 1 k VCB = 10 V, IE = -2 mA, f = 200 MHz -30% 150 0.51 1 2.2 4.7 10 22 47 100 4.9 hFE VCE = 10 V, IC = 5 mA 6 20 30 35 60 80 80 160
20
400 460 0.25 V V 0.2 V
MHz +30% k
resistance UNR9219J UNR921MJ/921VJ UNR9216J/921FJ/921LJ/921NJ UNR9211J/9214J/9215J/921KJ UNR9212J/9217J/921TJ UNR9210J/9213J/921DJ/921EJ UNR921AJ/921BJ
2
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Transistors with built-in Resistor
Electrical Characteristics (continued) Ta = 25C 3C
Parameter Emitter-base resistance UNR921CJ Rasistance UNR921MJ ratio UNR921NJ UNR9218J/9219J UNR9214J UNR921TJ UNR921FJ UNR921AJ/921VJ UNR9211J/9212J/9213J/921LJ UNR921KJ UNR921EJ UNR921DJ 0.8 1.70 1.70 3.7 0.37 0.08 0.17 Symbol R2 R1/R2 Conditions Min
UNR921xJ Series
Typ 47 0.047 0.1 0.10 0.21 0.47 0.47 1.0 1.0 2.13 2.14 4.7
Max +30%
Unit k
-30%
0.12 0.25
0.57
1.2 2.60 2.60 5.7
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart PT Ta
150
Total power dissipation PT (mW)
125
100
75
50
25
0
0
40
80
120
160
Ambient temperature Ta (C)
Characteristics charts of UNR9210J IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
60 IB = 1.0 mA 0.9 mA 0.8 mA Ta = 25C
102
VCE(sat) IC
IC / IB = 10
hFE IC
400 VCE = 10 V
Forward current transfer ratio hFE
50
Collector current IC (mA)
10
300 Ta = 75C 25C 200 -25C 100
40 0.4 mA 0.5 mA 0.6 mA 0.7 mA 0.1 mA
30
0.3 mA
1 Ta = 75C 25C 10 -1 -25C 10 -2 10 -1
20
10
0
0
2
4
6
8
10
12
0
1 10 102
1
10
102
103
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
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3
UNR921xJ Series
Cob VCB
Collector output capacitance (Common base, input open circuited) Cob (pF)
6 f = 1 MHz IE = 0 Ta = 25C
104
Transistors with built-in Resistor
IO VIN
VO = 5 V Ta = 25C
VIN IO
102 VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
103
10
1
2
10
10 -1
1
0 10 -1
1
10
102
1 0.4
0.6
0.8
1.0
1.2
1.4
10 -2 10 -1
1
10
102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR9211J IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
160 IB = 1.0 mA 0.9 mA 0.8 mA Ta = 25C
VCE(sat) IC
102 IC / IB = 10
400
hFE IC
VCE = 10 V
Collector current IC (mA)
120
0.7 mA 0.6 mA 0.5 mA 0.4 mA
10
Forward current transfer ratio hFE
300
Ta = 75C
80
0.3 mA
1 25C 10 -1 -25C
200 25C 100 -25C
0.2 mA 40
Ta = 75C
0.1 mA 0 0 2 4 6 8 10 12
10 -2 10 -1
1
10
102
0
1
10
102
103
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance (Common base, input open circuited) Cob (pF)
6 f = 1 MHz IE = 0 Ta = 25C
104
IO VIN
VO = 5 V Ta = 25C
VIN IO
102 VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
103
10
1
2
10
10 -1
1
0 10 -1
1
10
102
1 0.4
0.6
0.8
1.0
1.2
1.4
10 -2 10 -1
1
10
102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
4
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Transistors with built-in Resistor
Characteristics charts of UNR9212J IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
160 Ta = 25C IB = 1.0 mA 0.9 mA 0.8 mA
UNR921xJ Series
VCE(sat) IC
102 IC / IB = 10
400
hFE IC
VCE = 10 V
Collector current IC (mA)
120
0.7 mA 0.6 mA 0.5 mA 0.4 mA
10
Forward current transfer ratio hFE
300
Ta = 75C
80 0.3 mA
1 Ta = 75C
200 25C -25C
25C 10 -1 -25C
40
0.2 mA
100
0.1 mA 0 0 2 4 6 8 10 12
10 -2 10 -1
1
10
102
0
1
10
102
103
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance (Common base, input open circuited) Cob (pF)
6 f = 1 MHz IE = 0 Ta = 25C
104
IO VIN
VO = 5 V Ta = 25C
VIN IO
102 VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
103
10
1
2
10
10 -1
1
0 10 -1
1
10
102
1 0.4
0.6
0.8
1.0
1.2
1.4
10 -2 10 -1
1
10
102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR9213J IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
160 Ta = 25C IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 80 0.3 mA
VCE(sat) IC
102 IC / IB = 10
400
hFE IC
VCE = 10 V
Forward current transfer ratio hFE
Collector current IC (mA)
120
10
300
Ta = 75C 25C -25C
1
200
40
0.2 mA
25C 10 -1 -25C 10 -2 10 -1
Ta = 75C
100
0.1 mA 0
0
2
4
6
8
10
12
1
10
102
0
1
10
102
103
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
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5
UNR921xJ Series
Cob VCB
Collector output capacitance (Common base, input open circuited) Cob (pF)
6 f = 1 MHz IE = 0 Ta = 25C
Transistors with built-in Resistor
IO VIN
104 VO = 5 V Ta = 25C
102
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
Input voltage VIN (V)
103
10
3
102
1
2
10
10 -1
1
0 10 -1
1
10
102
1 0.4
0.6
0.8
1.0
1.2
1.4
10 -2 10 -1
1
10
102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR9214J IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
160 Ta = 25C IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 80 0.4 mA 0.3 mA 40 102
VCE(sat) IC
IC / IB = 10
400
hFE IC
VCE = 10 V
120
Forward current transfer ratio hFE
Collector current IC (mA)
10
300 Ta = 75C 200 25C -25C 100
1
Ta = 75C 10 -2 -25C 10 -1 10 -1 1 10 102 25C
0.2 mA 0.1 mA
0
0
2
4
6
8
10
12
0
1
10
102
103
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance (Common base, input open circuited) Cob (pF)
6 f = 1 MHz IE = 0 Ta = 25C
104
IO VIN
VO = 5 V Ta = 25C
VIN IO
102 VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
Input voltage VIN (V)
103
10
102
1
2
10
10 -1
1
0 10 -1
1
10
102
1 0.4
0.6
0.8
1.0
1.2
1.4
10 -2 10 -1
1
10
102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
6
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Transistors with built-in Resistor
Characteristics charts of UNR9215J IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
160 IB = 1.0 mA 0.9 mA 0.8 mA Ta = 25C
102
UNR921xJ Series
VCE(sat) IC
IC / IB = 10
hFE IC
400 VCE = 10 V
Forward current transfer ratio hFE
Collector current IC (mA)
120
0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA 0.1 mA
10
300 Ta = 75C
80
1
200 25C -25C 100
Ta = 75C 10 -1 -25C 10
-2
40
25C
0
0
2
4
6
8
10
12
10 -1
0
1 10 102
1
10
102
103
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance (Common base, input open circuited) Cob (pF)
6 f = 1 MHz IE = 0 Ta = 25C
104
IO VIN
VO = 5 V Ta = 25C
VIN IO
102 VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
103
10
1
2
10
10 -1
1
0 10 -1
1
10
102
1 0.4
0.6
0.8
1.0
1.2
1.4
10 -2 10 -1
1
10
102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR9216J IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
160 Ta = 25C IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA
102
VCE(sat) IC
IC / IB = 10
hFE IC
400 VCE = 10 V
120
Forward current transfer ratio hFE
Ta = 75C 300 25C -25C 200
Collector current IC (mA)
10
80
1
Ta = 75C 10 -1 25C
40
100
0.1 mA
0 0 2 4 6 8 10 12
-25C 10 -2 10 -1
0
1 10 102
1
10
102
103
Collector-emitter voltage VCE
(V)
Collector current IC (mA)
Collector current IC (mA)
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UNR921xJ Series
Cob VCB
Collector output capacitance (Common base, input open circuited) Cob (pF)
6 f = 1 MHz IE = 0 Ta = 25C
104
Transistors with built-in Resistor
IO VIN
VO = 5 V Ta = 25C
102
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
103
10
1
2
10
10 -1
1
0 10 -1
1
10
102
1 0.4
0.6
0.8
1.0
1.2
1.4
10 -2 10 -1
1
10
102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR9217J IC VCE
a IB =1 .0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA
VCE(sat) IC
T = 25C
hFE IC
400 VCE = 10 V
10
Forward current transfer ratio hFE
100
Collector-emitter saturation voltage VCE(sat) (V)
120
102
IC / IB = 10
Collector current IC (mA)
300
80 0.4 mA 0.3 mA 0.2 mA
60
1
Ta = 75C
200
Ta = 75C 25C
40
25C 10 -1
100
-25C
20 0 0 2 4 6 8
0.1 mA
-25C 10 -2 10 -1 1 10 102
0 1 10 102 103
10
12
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance (Common base, input open circuited) Cob (pF)
6 f = 1 MHz IE = 0 Ta = 25C
104
IO VIN
VO = 5 V Ta = 25C
VIN IO
102 VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
103
10
1
2
10
10 -1
1
0 10 -1
1
10
102
1 0.4
0.6
0.8
1.0
1.2
1.4
10 -2 10 - -1
1
10
102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
8
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Transistors with built-in Resistor
Characteristics charts of UNR9218J IC VCE
Ta = 25C
UNR921xJ Series
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
102 IC / IB = 10
hFE IC
160 VCE = 10 V
240
160
IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA
10
Forward current transfer ratio hFE
200
Collector current IC (mA)
120
Ta = 75C 80 25C -25C 40
120 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA 0 0.1 mA 0 2 4 6 8 10 12
1 Ta = 75C
80
10 -1
25C
40
10 -2 10 -1
-25C 1 10 102
0 1 10 102 103
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance (Common base, input open circuited) Cob (pF)
6 f = 1 MHz IE = 0 Ta = 25C
104
IO VIN
VO = 5 V Ta = 25C
VIN IO
102 VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
Input voltage VIN (V)
103
10
102
1
2
10
10 -1
1
0 10 -1
1
10
102
1 0.4
0.6
0.8
1.0
1.2
1.4
10 -2 10 -1
1
10
102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR9219J IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
240
102
VCE(sat) IC
Ta = 25C
IC / IB = 10
160
hFE IC
VCE = 10 V
Collector current IC (mA)
160
IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA
10
Forward current transfer ratio hFE
200
120
120 0.5 mA 0.4 mA 0.3 mA 0.2 mA 0.1 mA 0 0 2 4 6 8 10 12
1 Ta = 75C 10 -1 25C
80
Ta = 75C 25C -25C
80
40
40
-25C 10 -2 10 -1
0
1
10
102
1
10
102
103
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
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UNR921xJ Series
Cob VCB
Collector output capacitance (Common base, input open circuited) Cob (pF)
6 f = 1 MHz IE = 0 Ta = 25C
Transistors with built-in Resistor
IO VIN
104 VO = 5 V Ta = 25C
102
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
Input voltage VIN (V)
103
10
3
102
1
2
10
10 -1
1 10 -2 10 -1
0 10 -1
1
10
102
1 0.4
0.6
0.8
1.0
1.2
1.4
1
10
102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR921AJ IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
Ta = 25C 120 IB = 0.5 mA 0.4 mA 0.3 mA 80 0.2 mA 40 0.1 mA 1
VCE(sat) IC
IC / IB = 10
400 VCE = 10 V
hFE IC
Ta = 75C
Forward current transfer ratio hFE
Collector current IC (mA)
300
25C -25C
10 -1 Ta = 75C
200
25C
-25C
100
0
0
2
4
6
8
10
10 -2 10 -1
1
10
102
0 10 -1
1
10
102
103
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance (Common base, input open circuited) Cob (pF)
10 f = 1 MHz Ta = 25C 10
IO VIN
VO = 5 V Ta = 25C
102
VIN IO
VO = 0.2 V Ta = 25C
Output current IO (mA)
1
Input voltage VIN (V)
10
10 -1
1
10 -2 0 10 20 0 1 2 3
1 1 10 102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
10
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Transistors with built-in Resistor
Characteristics charts of UNR921BJ IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
120 Ta = 25C IB = 0.5 mA 100
UNR921xJ Series
VCE(sat) IC
10 IC / IB = 10
400
hFE IC
VCE = 10 V Ta = 75C 25C 300 -25C 200
0.4 mA 80 0.3 mA
1
60 0.2 mA 40 0.1 mA 20
10 -1 25C Ta = 75C
Forward current transfer ratio hFE
Collector current IC (mA)
100
-25C 10 -2 10 -1
0
0
0
2
4
6
8
10
1
10
102
1
10
102
103
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance (Common base, input open circuited) Cob (pF)
10 f = 1 MHz Ta = 25C
IO VIN
10 VO = 5 V Ta = 25C
102
VIN IO
VO = 0.2 V Ta = 25C
Output current IO (mA)
Input voltage VIN (V)
10
1
1
1
0
10
20
30
40
Collector-base voltage VCB
(V)
10 -1 0.4
0.8
1.2
1.6
10 -1 10 -1
1
10
102
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR921CJ IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
IB = 1.0 mA 120 Ta = 25C 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 1
VCE(sat) IC
IC / IB = 10
300
hFE IC
VCE = 10 V
Forward current transfer ratio hFE
Ta = 75C 25C
Collector current IC (mA)
80
200
10 -1 25C
Ta = 75C
-25C
0.2 mA 40 0.1 mA
100
-25C
0
0
2
4
6
8
10
10 -2 1
0
10
102
1
10
102
103
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
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UNR921xJ Series
Cob VCB
Collector output capacitance (Common base, input open circuited) Cob (pF)
102 f = 1 MHz Ta = 25C
Transistors with built-in Resistor
IO VIN
102
10
VIN IO
VO = 0.2 V Ta = 25C
VO = 5 V Ta = 25C
Output current IO (mA)
10
Input voltage VIN (V)
10
1
1
1
0
10
20
30
40
10 -1 0 0.4 0.8
10 -1 1 10 102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR921DJ IC VCE
Ta = 25C 0.9 mA 0.8 mA 0.5 mA 0.4 mA 0.7 mA 25 0.3 mA 0.6 mA IB = 1.0 mA 20
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
102 IC / IB = 10
hFE IC
160 VCE = 10 V Ta = 75C 25C -25C
30
Forward current transfer ratio hFE
Collector current IC (mA)
10
120
15 0.2 mA 10 0.1 mA
1
80
10 -1
25C
Ta = 75C
40
5
-25C 10 -2 10 -1
0
0
1 10 102
0
2
4
6
8
10
12
1
10
102
103
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance (Common base, input open circuited) Cob (pF)
6 f = 1 MHz IE = 0 Ta = 25C
104
IO VIN
VO = 5 V Ta = 25C
102
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
Input voltage VIN (V)
103
10
3
102
1
2
10
10 -1
1
10 -2 10 -1
0 10 -1
1
10
102
1 1.5
2.0
2.5
3.0
3.5
4.0
1
10
102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
12
SJH00039BED
Transistors with built-in Resistor
Characteristics charts of UNR921EJ IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
60 IB = 1.0 mA 0.7 mA Ta = 25C 0.9 mA 0.6 mA 0.8 mA
UNR921xJ Series
VCE(sat) IC
102 IC / IB = 10
160
hFE IC
VCE = 10 V
Forward current transfer ratio hFE
50
Collector current IC (mA)
10
120
Ta = 75C 25C -25C
40 0.3 mA 0.2 mA 0.4 mA 0.5 mA 0.1 mA
30
1 Ta = 75C 25C
80
20
10 -1
40
10
-25C 10 -2 10 -1
0
0
0
2
4
6
8
10
12
1
10
102
1
10
102
103
Collector-emitter voltage VCE
(V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance (Common base, input open circuited) Cob (pF)
6 f = 1MHz IE = 0 Ta = 25C
104
IO VIN
VO = 5 V Ta = 25C
102
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
103
10
1
2
10
10 -1
1
0 10 -1
1
10
102
1 1.5
2.0
2.5
3.0
3.5
4.0
10 -2 10 -1
1
10
102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR921FJ IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
240 Ta = 25C
102
VCE(sat) IC
IC / IB = 10
hFE IC
160 VCE = 10 V
Forward current transfer ratio hFE
200
Collector current IC (mA)
160
0.9 mA 0.8 mA 0.7 mA 0.6 mA IB = 1.0 mA 0.5 mA 0.4 mA 0.3 mA
10
120
Ta = 75C 80 25C -25C
120
1
Ta = 75C
80
25C 10 -1
40
40 0.2 mA 0.1 mA 0 0 2 4 6 8 10 12
-25C 10 -2 10 -1
0
1 10 102
1
10
102
103
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
SJH00039BED
13
UNR921xJ Series
Cob VCB
Collector output capacitance (Common base, input open circuited) Cob (pF)
6 f = 1 MHz IE = 0 Ta = 25C
104
Transistors with built-in Resistor
IO VIN
VO = 5 V Ta = 25C
VIN IO
102 VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
103
10
1
2
10
10 -1
1
0 10 -1
1
10
102
1 0.4
0.6
0.8
1.0
1.2
1.4
10 -2 10 -1
1
10
102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR921KJ IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
240
VCE(sat) IC
102
Ta = 25C
hFE IC
240 VCE = 10 V
IC / IB = 10
200
Collector current IC (mA)
10
Forward current transfer ratio hFE
200
160 IB = 1.2 mA 1.0 mA 0.8 mA 80 0.6 mA 0.4 mA 0.2 mA 0 0 2 4 6 8 10 12
160 Ta = 75C 120 25C 80
120
1
10 -1
25C
Ta = 75C
-25C
40
-25C
40
10 -2 1
0
10
102
103
1
10
102
103
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance (Common base, input open circuited) Cob (pF)
6 f = 1 MHz IE = 0 Ta = 25C
102
VIN IO
VO = 0.2 V Ta = 25C
5
4
3
Input voltage VIN (V)
1 10 102
10
1
2
10 -1
1
0
10 -2 10 -1
1
10
102
Collector-base voltage VCB (V)
Output current IO (mA)
14
SJH00039BED
Transistors with built-in Resistor
Characteristics charts of UNR921LJ IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
240 Ta = 25C
UNR921xJ Series
VCE(sat) IC
102 IC / IB = 10
240
hFE IC
VCE = 10 V
200
10
Forward current transfer ratio hFE
200 Ta = 75C
Collector current IC (mA)
160 IB = 1.0 mA 120 0.8 mA 0.6 mA 80 0.4 mA
160
1 Ta = 75C 10 -1 25C -25C 10 -2 1 10
120
25C -25C
80
40 0.2 mA 0
40
0
2
4
6
8
10
12
102
103
0
1
10
102
103
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance (Common base, input open circuited) Cob (pF)
6 f = 1 MHz IE = 0 Ta = 25C
VIN IO
102 VO = 0.2 V Ta = 25C
5
4
3
Input voltage VIN (V)
1 10 102
10
1
2
10 -1
1
0
10 -2 10 -1
1
10
102
Collector-base voltage VCB (V)
Output current IO (mA)
Characteristics charts of UNR921MJ IC VCE
Ta = 25C IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
10
hFE IC
500 VCE = 10 V
240
IC / IB = 10
Forward current transfer ratio hFE
200
400
Collector current IC (mA)
1
160
Ta = 75C 10 -1 25C
300
Ta = 75C 25C
120
0.5 mA 0.4 mA 0.3 mA 0.2 mA
200
80
-25C 10 -2
-25C
40
0.1 mA
100
0
10 -3
0
2
4
6
8
10
12
1
10
102
103
0
1
10
102
103
Collector-emitter voltage VCE
(V)
Collector current IC (mA)
Collector current IC (mA)
SJH00039BED
15
UNR921xJ Series
Cob VCB
Collector output capacitance (Common base, input open circuited) Cob (pF)
5 f = 1 MHz IE = 0 Ta = 25C 4
104
Transistors with built-in Resistor
IO VIN
VO = 5 V Ta = 25C
102
VIN IO
VO = 0.2 V Ta = 25C
Output current IO (A)
103
10
3
102
Input voltage VIN (V)
1
2
10
10 -1
1
0 10 -1
1
10
102
1
0.4
0.6
0.8
1.0
1.2
1.4
10 -2 10 -1
1
10
102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR921NJ IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
160 Ta = 25C IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA 40 0.1 mA 10
VCE(sat) IC
IC / IB = 10
480
hFE IC
VCE = 10 V
120
Forward current transfer ratio hFE
400 Ta = 75C
Collector current IC (mA)
1
320 25C 240
80
10 -1
Ta = 75C 25C -25C
160
-25C
80
0
0
2
4
6
8
10
12
10 -2 1
10
102
103
0
1
10
102
103
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance (Common base, input open circuited) Cob (pF)
6 f = 1 MHz IE = 0 Ta = 25C
104
IO VIN
VO = 5 V Ta = 25C
VIN IO
102 VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
Input voltage VIN (V)
103
10
3
102
1
2
10
10 -1
1
10 -2 10 -1
0
1
10
102
1 0.4
0.6
0.8
1.0
1.2
1.4
1
10
102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
16
SJH00039BED
Transistors with built-in Resistor
Characteristics charts of UNR921TJ IC VCE
160
Ta = 25C IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA
UNR921xJ Series
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (mV)
103 IC / IB = 10
hFE IC
400 VCE = 10 V Ta = 75C 300 25C
120
Ta = 75C 102 25C -25C
80
Forward current transfer ratio hFE
Collector current IC (mA)
200
-25C
40
0.1 mA
100
0
0
2
4
6
8
10
10
1
10
102
0 10 -1
1
10
102
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance (Common base, input open circuited) Cob (pF)
4
102
IO VIN
VO = 5 V Ta = 25C
102
VIN IO
VO = 0.2 V Ta = 25C
Output current IO (mA)
Input voltage VIN (V)
3
10
10
1
2
10 -1
1
1
10 -2
0
1
10
102
10 -3 0.25
0.75
1.25
10 -1 10 -3
10 -2
10 -1
1
10
102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR921VJ IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
160 Ta = 25C
10
VCE(sat) IC
IC / IB = 10
hFE IC
240 VCE = 10 V
120
IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA
1
Forward current transfer ratio hFE
200
Collector current IC (mA)
160 Ta = 75C 120 25C 80 -25C
80
0.6 mA 0.5 mA
10 -1
Ta = 75C 25C
40 0.4 mA 0.3 mA 0.2 mA 0 2 4 6 8 10 12
-25C 10 -2 1
40
0
0
10 102 103
1
10
102
103
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
SJH00039BED
17
UNR921xJ Series
Cob VCB
Collector output capacitance (Common base, input open circuited) Cob (pF)
6 f = 1 MHz IE = 0 Ta = 25C 104
Transistors with built-in Resistor
IO VIN
102
VIN IO
VO = 5 V Ta = 25C
10 VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
Input voltage VIN (V)
103
3
102
1
2
10 1
10 -1
0
1
10
102
1 0.4
0.6
0.8
1.0
1.2
1.4
10 -2 10 -1
1
10
102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
18
SJH00039BED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP

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